纳米cmos高阶合成的统一挑战

S. Mohanty
{"title":"纳米cmos高阶合成的统一挑战","authors":"S. Mohanty","doi":"10.1109/VLSI.Design.2009.124","DOIUrl":null,"url":null,"abstract":"The challenges in nano-CMOS circuit design include the following: variability, leakage, power, thermals, reliability, and yield. This talk will focus on interdependent consideration of these challenges during high-level (aka architectural or behavioral) synthesis. The majority of the existing design techniques related to these challenges are at the device or logic level of circuit abstraction and few are at the architectural level, however, the research is full swing in this direction. At the architecture level, there are balanced degrees of freedom to vary design parameters and take fast and correct design decisions at an early phase of the design cycle without propagating the design errors to lower levels of circuit abstraction, where it is costly to correct them. In addition, designing at higher levels of abstraction is an efficient way to cope with complexity, facilitate design verification, and increase design reuse. For maximizing yield of circuit design in the presence of variability the designers can rely on pre- silicon or post-silicon techniques. The pre-silicon techniques are statistical optimization approaches of design phases that use statistical power, leakage, and timing analysis for design space exploration and maximize the parametric yield. A variety of approaches for scheduling, resource sharing, and module selection techniques have been proposed in current literature in this respect. The post-silicon techniques are approaches like adaptive body biasing and adaptive supply voltage which are used to tune the fabricated chips such that the circuit yield can be optimized. This talk will discuss all these techniques proposed in the context of HLS.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Unified Challenges in Nano-CMOS High-Level Synthesis\",\"authors\":\"S. Mohanty\",\"doi\":\"10.1109/VLSI.Design.2009.124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The challenges in nano-CMOS circuit design include the following: variability, leakage, power, thermals, reliability, and yield. This talk will focus on interdependent consideration of these challenges during high-level (aka architectural or behavioral) synthesis. The majority of the existing design techniques related to these challenges are at the device or logic level of circuit abstraction and few are at the architectural level, however, the research is full swing in this direction. At the architecture level, there are balanced degrees of freedom to vary design parameters and take fast and correct design decisions at an early phase of the design cycle without propagating the design errors to lower levels of circuit abstraction, where it is costly to correct them. In addition, designing at higher levels of abstraction is an efficient way to cope with complexity, facilitate design verification, and increase design reuse. For maximizing yield of circuit design in the presence of variability the designers can rely on pre- silicon or post-silicon techniques. The pre-silicon techniques are statistical optimization approaches of design phases that use statistical power, leakage, and timing analysis for design space exploration and maximize the parametric yield. A variety of approaches for scheduling, resource sharing, and module selection techniques have been proposed in current literature in this respect. The post-silicon techniques are approaches like adaptive body biasing and adaptive supply voltage which are used to tune the fabricated chips such that the circuit yield can be optimized. This talk will discuss all these techniques proposed in the context of HLS.\",\"PeriodicalId\":267121,\"journal\":{\"name\":\"2009 22nd International Conference on VLSI Design\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 22nd International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.Design.2009.124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

纳米cmos电路设计的挑战包括:可变性、漏电、功率、热、可靠性和良率。本次演讲将集中讨论在高层(又名架构或行为)合成过程中对这些挑战的相互依赖考虑。与这些挑战相关的现有设计技术大多数是在器件或电路抽象的逻辑层面,很少在架构层面,然而,研究正朝着这个方向全面展开。在架构级别,有平衡的自由度来改变设计参数,并在设计周期的早期阶段采取快速和正确的设计决策,而不会将设计错误传播到较低的电路抽象级别,在较低的级别纠正它们是昂贵的。此外,在更高的抽象层次上进行设计是处理复杂性、促进设计验证和增加设计重用的有效方法。为了在存在可变性的情况下最大化电路设计的产量,设计人员可以依赖于硅前或硅后技术。预硅技术是设计阶段的统计优化方法,它使用统计功率、泄漏和时序分析来进行设计空间探索,并最大化参数良率。在这方面,目前的文献中提出了各种调度、资源共享和模块选择技术的方法。后硅技术是自适应体偏置和自适应电源电压等方法,用于调整制造芯片,使电路良率可以优化。本讲座将讨论在HLS的背景下提出的所有这些技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unified Challenges in Nano-CMOS High-Level Synthesis
The challenges in nano-CMOS circuit design include the following: variability, leakage, power, thermals, reliability, and yield. This talk will focus on interdependent consideration of these challenges during high-level (aka architectural or behavioral) synthesis. The majority of the existing design techniques related to these challenges are at the device or logic level of circuit abstraction and few are at the architectural level, however, the research is full swing in this direction. At the architecture level, there are balanced degrees of freedom to vary design parameters and take fast and correct design decisions at an early phase of the design cycle without propagating the design errors to lower levels of circuit abstraction, where it is costly to correct them. In addition, designing at higher levels of abstraction is an efficient way to cope with complexity, facilitate design verification, and increase design reuse. For maximizing yield of circuit design in the presence of variability the designers can rely on pre- silicon or post-silicon techniques. The pre-silicon techniques are statistical optimization approaches of design phases that use statistical power, leakage, and timing analysis for design space exploration and maximize the parametric yield. A variety of approaches for scheduling, resource sharing, and module selection techniques have been proposed in current literature in this respect. The post-silicon techniques are approaches like adaptive body biasing and adaptive supply voltage which are used to tune the fabricated chips such that the circuit yield can be optimized. This talk will discuss all these techniques proposed in the context of HLS.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信