Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian
{"title":"一种新的四阶单元3D NAND快闪记忆体加速编码方法","authors":"Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian","doi":"10.1109/ISNE.2016.7543285","DOIUrl":null,"url":null,"abstract":"As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"63 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel speed-up coding method in quadruple-level-cell 3D NAND flash memory\",\"authors\":\"Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian\",\"doi\":\"10.1109/ISNE.2016.7543285\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"63 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543285\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel speed-up coding method in quadruple-level-cell 3D NAND flash memory
As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.
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