低剂量γ辐射对多孔硅相变红外光谱的影响

2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2016-09-01 DOI:10.1109/APEDE.2016.7879067

D. I. Bilenko, D. Terin, O. Belobrovaya, I. Galushka, É. A. Zharkova, V. Polyanskaya, V. Sidorov, I. T. Yagudin

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引用次数: 0

摘要

研究了低剂量放射性同位素源γ -量子和轫致辐射对多孔硅红外光谱的影响。

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Effect of low doses of gamma radiation on the transformation ir spectra of porous silicon

The possibilities of modifying the IR spectra of porous silicon under irradiation by low doses of gamma — quanta of radioisotope source of 226Ra and bremsstrahlung radiation are investigated.

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来源期刊

2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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