H. Besaucele, A. Adnet, François Beau, Yacine Bouksou, Cédric Bellier, P. Ceccato, Maxime Chatelain, Nabil Douri, Hervé Dusserre, C. Dutems, Martin Heintzmann, K. Huet, Mathieu Lenormand, Bobby Lespinasse, Vincent Martinez, F. Mazzamuto, Antoine Melin, S. Perrot, David Rodrigues, L. Ruet, Olivier Sannier, G. Thébault, I. Toqué-Trésonne, Armand Vestraete, Karim Zekri
{"title":"用于半导体器件纳秒退火的高能准分子激光系统","authors":"H. Besaucele, A. Adnet, François Beau, Yacine Bouksou, Cédric Bellier, P. Ceccato, Maxime Chatelain, Nabil Douri, Hervé Dusserre, C. Dutems, Martin Heintzmann, K. Huet, Mathieu Lenormand, Bobby Lespinasse, Vincent Martinez, F. Mazzamuto, Antoine Melin, S. Perrot, David Rodrigues, L. Ruet, Olivier Sannier, G. Thébault, I. Toqué-Trésonne, Armand Vestraete, Karim Zekri","doi":"10.1117/12.2522443","DOIUrl":null,"url":null,"abstract":"We present a high energy UV, 308 nm Xenon-Chloride excimer laser system providing a precisely controlled ultra-fast (nanosecond scale) thermal processing of semiconductor devices. The main elements of the system are described and key performance indicators are presented.","PeriodicalId":375593,"journal":{"name":"Advanced High-Power Lasers and Applications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High energy excimer laser system for nanosecond annealing of semiconductor devices\",\"authors\":\"H. Besaucele, A. Adnet, François Beau, Yacine Bouksou, Cédric Bellier, P. Ceccato, Maxime Chatelain, Nabil Douri, Hervé Dusserre, C. Dutems, Martin Heintzmann, K. Huet, Mathieu Lenormand, Bobby Lespinasse, Vincent Martinez, F. Mazzamuto, Antoine Melin, S. Perrot, David Rodrigues, L. Ruet, Olivier Sannier, G. Thébault, I. Toqué-Trésonne, Armand Vestraete, Karim Zekri\",\"doi\":\"10.1117/12.2522443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a high energy UV, 308 nm Xenon-Chloride excimer laser system providing a precisely controlled ultra-fast (nanosecond scale) thermal processing of semiconductor devices. The main elements of the system are described and key performance indicators are presented.\",\"PeriodicalId\":375593,\"journal\":{\"name\":\"Advanced High-Power Lasers and Applications\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced High-Power Lasers and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2522443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced High-Power Lasers and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2522443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High energy excimer laser system for nanosecond annealing of semiconductor devices
We present a high energy UV, 308 nm Xenon-Chloride excimer laser system providing a precisely controlled ultra-fast (nanosecond scale) thermal processing of semiconductor devices. The main elements of the system are described and key performance indicators are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
