{"title":"采用0.25 /spl μ m GaAs pHEMT工艺制造的低成本x波段功率放大器MMIC","authors":"W. Bosch, J. Mayock, M. O'Keefe, J. McMonagle","doi":"10.1109/RADAR.2005.1435787","DOIUrl":null,"url":null,"abstract":"A family of X-Band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150 mm (6\") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit 5 W to 10 W RF output power under pulsed conditions; 16 dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30 GHz.","PeriodicalId":444253,"journal":{"name":"IEEE International Radar Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Low cost X-band power amplifier MMIC fabricated on a 0.25 /spl mu/m GaAs pHEMT process\",\"authors\":\"W. Bosch, J. Mayock, M. O'Keefe, J. McMonagle\",\"doi\":\"10.1109/RADAR.2005.1435787\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A family of X-Band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150 mm (6\\\") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit 5 W to 10 W RF output power under pulsed conditions; 16 dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30 GHz.\",\"PeriodicalId\":444253,\"journal\":{\"name\":\"IEEE International Radar Conference, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Radar Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADAR.2005.1435787\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Radar Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADAR.2005.1435787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low cost X-band power amplifier MMIC fabricated on a 0.25 /spl mu/m GaAs pHEMT process
A family of X-Band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150 mm (6") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit 5 W to 10 W RF output power under pulsed conditions; 16 dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30 GHz.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
