CMOS浮栅故障的概率分析

Hua Xue, C. Di, J. Jess
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引用次数: 44

摘要

浮栅MOS晶体管的电学行为与掩模拓扑有关,即浮在互连的不同位置上可能导致不同的故障行为。在本文中,我们提出了一种面向网络的确定性方法,通过考虑过程缺陷统计和掩模布局数据来计算每个网络上不同开放故障的概率。引起浮门的开断故障分为三种类型,即(1)p沟道晶体管的开断引起浮门,(2)n沟道晶体管的开断引起浮门,(3)p沟道晶体管和n沟道晶体管的开断引起浮门。对于每个网络,得到浮门故障(1)、(2)、(3)的概率。分析结果可为设计更可靠、可测试的电路、采用更精确的故障模型、引入有效的测试策略提供指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Probability analysis for CMOS floating gate faults
The electrical behavior of a floating gate MOS transistor is mask-topology-dependent, i.e. floating on different sites of interconnection may result in different fault behavior. In this paper, we present a net-oriented deterministic approach to compute the probability of different open faults on each net, by taking into account the process defect statistics and mask layout data. The open faults causing floating gates are classified into three types, i.e. (1) open causes floating gates of p-channel transistors, (2) open causes floating gates of n-channel transistors, and (3) open causes floating gates of both p-channel transistors and n-channel transistors. For each net the probabilities of floating gate faults (1), (2) and (3) are obtained. The results of the analysis can be used as guidelines for designing more reliable and testable circuits, adopting more accurate fault models, introducing effective testing strategies.<>
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