基于极化薄膜包覆硅纳米线场效应晶体管的神经形态杂化系统

2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) Pub Date : 2021-09-29 DOI:10.1109/CNNA49188.2021.9610819

L. Panes-Ruiz, B. Ibarlucea, Eunhye Baek, SangWook Park, C. Baek, Xinliang Feng, G. Cuniberti

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摘要

本文提出了两种基于硅纳米线场效应晶体管极化薄膜的混合神经晶体管的发展方法，用于模拟神经元的信号处理。离子在偏置电压下的再分布所产生的膜的极化特性，为系统提供了在硬件水平上利用离子在神经元膜上的迁移来实现神经元固有可塑性所需的记忆行为。

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Neuromorphic hybrid systems based on polarizable thin film-coated silicon nanowire field-effect transistors

We present two approaches for the development of hybrid neurotransistors based on the combination of polarizable thin films on silicon nanowires field-effect transistors for the emulation of signal processing by neurons. The polarizing properties of the films coming from the ion redistribution under bias voltage provide the systems with a memristive behavior needed to achieve the neuronal intrinsic plasticity using ionic migration in the neuron membrane at a hardware level.

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2021 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA)

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