基于共封装光电二极管的16nm CMOS 4-PAM线性TIA灵敏度为112gb /s -8.2 dBm

Dhruv Rajendra Patel, A. Sharif-Bakhtiar, A. C. Carusone
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引用次数: 9

摘要

为了支持400GBASE-DR4/FR4链路,数据中心对100+ Gb/s 4-PAM低功耗低成本光接收机(RX)的需求越来越大。现有的可插拔解决方案一般在BiCMOS中实现RX前端。然而,一种更集成的解决方案,将RX前端集成到CMOS主机IC上,并与光电二极管(pd)一起封装,提供了更小尺寸、更低成本和更低功耗的潜力[1],[2]。这项工作展示了一个112 Gb/s的4-PAM CMOS倒装片线性TIA,与商用pd和不同的PD-to-RX互连长度共封装(图1a)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 112 Gb/s -8.2 dBm Sensitivity 4-PAM Linear TIA in 16nm CMOS with Co-Packaged Photodiodes
Low-cost optical receivers (RX) operating at 100+ Gb/s 4-PAM with low power are in high demand to support 400GBASE-DR4/FR4 links in data centers. Existing pluggable solutions generally realize the RX front-end in BiCMOS. However, a more integrated solution, with the RX front-ends integrated onto a CMOS host IC and co-packaged alongside the photodiodes (PDs), offers the potential for smaller size, lower cost, and lower power [1], [2]. This work demonstrates a 112 Gb/s 4-PAM linear TIA in CMOS flip-chip co-packaged with commercial PDs and different PD-to-RX interconnect lengths (Fig. 1a).
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