{"title":"基于外延砷化镓的探测器结构的电流-电压特性","authors":"V. Kalygina, I. Ponomarev, E. S. Slunko","doi":"10.1109/SIBCON.2007.371326","DOIUrl":null,"url":null,"abstract":"Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.","PeriodicalId":131657,"journal":{"name":"2007 Siberian Conference on Control and Communications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide\",\"authors\":\"V. Kalygina, I. Ponomarev, E. S. Slunko\",\"doi\":\"10.1109/SIBCON.2007.371326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.\",\"PeriodicalId\":131657,\"journal\":{\"name\":\"2007 Siberian Conference on Control and Communications\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2007.371326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2007.371326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide
Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.
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