用LP-MOVPE在InP衬底上生长的方法实现高应变短周期InAs/GaAs超晶格

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328298

A. Lindner, Q. Liu, F. Scheffer, W. Prost, F. Tegude

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摘要

由二元材料组成的短周期应变层超晶格(SPSLS)在基础研究和潜在的器件应用中引起了相当大的兴趣，因为它们能够分别在水平方向上表现出二元和垂直方向上表现出三元的物理行为。利用HRXRD方法对LP-MOVPE的生长、高应变单层和短周期应变层超晶格的表征进行了详细分析，确定了层厚度、层质量和界面质量。研究了生长次数、周期数和生长温度对摇摆曲线形状的影响，并与计算机辅助模拟进行了比较

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Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates

Short-period strained layer superlattices (SPSLS) composed of binary materials have attracted considerable interest both for fundamental research and for potential device applications due to their capability of exhibiting the physical behavior of a binary in a horizontal and of a ternary in a vertical direction, respectively. A detailed analysis concerning LP-MOVPE growth and characterization of highly strained single layers and short-period strained-layer superlattices was made using the HRXRD method to determine layer thicknesses, layer quality and interface quality. Influence of growth times as well as period number and growth temperature on the shape of the rocking curves was studied and compared with computer aided simulations.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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