亚阈值电路待机和有功能量同时优化

Ali T. Shaheen, S. Taha
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引用次数: 0

摘要

CMOS电路在特征尺寸和阈值电压方面的减小会导致泄漏电流的急剧增加。因此,随着技术规模的扩大,降低泄漏功率是主动和待机模式的重要设计问题。本文提出了一种用于22nm亚阈值CMOS电路的同时有源和待机能量优化方法。在第一阶段,我们研究了每周期有功能量最小化的双阈值电压设计。提出了一种基于松弛的遗传算法,用于寻找非关键路径栅极组的最优反向偏置分配,以确保在最优电源电压下,以最大允许频率保证每周期低有功能量。第二阶段,在第一阶段确定的最佳电源电压下,确定可应用于所有门的最佳反向体偏置,以实现待机功率优化。因此,存在两组门和每组两个反向体偏置值。反向体偏置在这两个值之间切换,以响应操作模式。在一些ISCAS-85基准电路如74L85、74283、ALU74181和16位RCA上得到了实验结果。优化后的电路显示出显著的节能幅度(14.5% ~ 42.28%)和待机节能幅度(62.8% ~ 67%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simultaneous Optimization of Standby and Active Energy for Sub-threshold Circuits
Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply voltage. The second phase, determine the optimal reverse body bias that can be applied to all gates for standby power optimization at the optimal supply voltage determined from the first phase. Therefore, there exist two sets of gates and two reverse body bias values for each set. The reverse body bias is switched between these two values in response to the mode of operation. Experimental results are obtained for some ISCAS-85 benchmark circuits such as 74L85, 74283, ALU74181, and 16 bit RCA. The optimized circuits show significant energy saving ranged (from 14.5% to 42.28%) and standby power saving ranged (from 62.8% to 67%).
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