K. Tsuchiya, T. Kitagawa, Y. Uetsuji, E. Nakamachi
{"title":"Fabrication of Smart Material PZT Thin Films by RF Magnetron Sputtering Method in Micro Actuators","authors":"K. Tsuchiya, T. Kitagawa, Y. Uetsuji, E. Nakamachi","doi":"10.1299/JSMEA.49.201","DOIUrl":null,"url":null,"abstract":"PZT piezoelectric thin films can be promising candidates for microactuators or microsensors in MEMS (Micro Electro Mechanical Systems) or NEMS (Nano Electro Mechanical Systems) because of the quick response. In this research, the RF magnetron sputtering method is used for PZT thin films deposition. The sputtering conditions to control the crystalline plane (111) of perovskite structure for PZT to influence the piezoelectric constant can be proposed. Those sputtering conditions such as substrate angle and temperature, Ar/O2 pressure and flow rate were investigated by the heuristic and experimental design method to fabricate optimum PZT perovskite crystal thin film. The condition of substrate temperature was the most important factor to improve piezoelectric constant. The crystalline structure, surface topography and piezoelectric constant of the deposited PZT were observed by X-ray diffraction structural analysis, atomic force microscope and piezoelectric constant evaluation equipment. PZT thin films with only perovskite structure were obtained. PZT (111) was grown with the increase in substrate temperature, and the piezoelectric property was improved. The elastic modulus of 70GPa for the deposited PZT found a good agreement with the quoted value for commercial based bulk PZT. We obtained a piezoelectric constant d31=-28pm/V and a high performance of bimorph actuator.","PeriodicalId":170519,"journal":{"name":"Jsme International Journal Series A-solid Mechanics and Material Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Jsme International Journal Series A-solid Mechanics and Material Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1299/JSMEA.49.201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

PZT压电薄膜由于响应速度快,可以作为MEMS(微电子机械系统)或NEMS(纳米电子机械系统)中的微致动器或微传感器。本研究采用射频磁控溅射法沉积PZT薄膜。提出了控制钙钛矿结构的晶面(111)以影响压电常数的溅射条件。采用启发式和实验设计的方法,考察了衬底角度和温度、Ar/O2压力和流速等溅射条件,以制备最佳的PZT钙钛矿晶体薄膜。衬底温度条件是提高压电常数的最重要因素。利用x射线衍射结构分析、原子力显微镜和压电常数评价设备对沉积的PZT的晶体结构、表面形貌和压电常数进行了观察。得到了仅具有钙钛矿结构的PZT薄膜。PZT(111)随着衬底温度的升高而生长,压电性能得到改善。沉积的PZT弹性模量为70GPa,与商用大块PZT的报价值吻合较好。我们得到了一个压电常数d31=-28pm/V和高性能的双晶圆作动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of Smart Material PZT Thin Films by RF Magnetron Sputtering Method in Micro Actuators
PZT piezoelectric thin films can be promising candidates for microactuators or microsensors in MEMS (Micro Electro Mechanical Systems) or NEMS (Nano Electro Mechanical Systems) because of the quick response. In this research, the RF magnetron sputtering method is used for PZT thin films deposition. The sputtering conditions to control the crystalline plane (111) of perovskite structure for PZT to influence the piezoelectric constant can be proposed. Those sputtering conditions such as substrate angle and temperature, Ar/O2 pressure and flow rate were investigated by the heuristic and experimental design method to fabricate optimum PZT perovskite crystal thin film. The condition of substrate temperature was the most important factor to improve piezoelectric constant. The crystalline structure, surface topography and piezoelectric constant of the deposited PZT were observed by X-ray diffraction structural analysis, atomic force microscope and piezoelectric constant evaluation equipment. PZT thin films with only perovskite structure were obtained. PZT (111) was grown with the increase in substrate temperature, and the piezoelectric property was improved. The elastic modulus of 70GPa for the deposited PZT found a good agreement with the quoted value for commercial based bulk PZT. We obtained a piezoelectric constant d31=-28pm/V and a high performance of bimorph actuator.
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