集成e平面微带插片波导技术的宽带场效应管放大器

1987 17th European Microwave Conference Pub Date : 1987-10-01 DOI:10.1109/EUMA.1987.333713

U. Meier, J. Hinken, W. Stenzl

{"title":"集成e平面微带插片波导技术的宽带场效应管放大器","authors":"U. Meier, J. Hinken, W. Stenzl","doi":"10.1109/EUMA.1987.333713","DOIUrl":null,"url":null,"abstract":"This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB.","PeriodicalId":208245,"journal":{"name":"1987 17th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert\",\"authors\":\"U. Meier, J. Hinken, W. Stenzl\",\"doi\":\"10.1109/EUMA.1987.333713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB.\",\"PeriodicalId\":208245,\"journal\":{\"name\":\"1987 17th European Microwave Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 17th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1987.333713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 17th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1987.333713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

结合平面技术和集成波导技术(inwater)的优点，设计了一种gaas场效应管宽带低噪声波导放大器。一个新的波导到微带过渡允许容易组装，小尺寸，和良好的电气性能。单级x波段放大器在3.3 GHz带宽上的增益为9±1.3dB，相关噪声系数小于3dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert

This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1987 17th European Microwave Conference

自引率

0.00%

发文量