双栅MOSFET全加法器电路的设计

J. K. Sahani, Shiwani Singh
{"title":"双栅MOSFET全加法器电路的设计","authors":"J. K. Sahani, Shiwani Singh","doi":"10.1109/ACCT.2015.37","DOIUrl":null,"url":null,"abstract":"This paper presents a design of a one bit full adder cell based on degenerate pass transistor logic (PTL) using Double Gate MOSFET. The design cell is degenerate 5-T XOR-XNOR module. This design has been compared with existing one-bit full adder cell based on degenerate pass transistor logic (PTL) designed using Single Gate MOSFET. In this paper, the proposed circuit has been analyzed for parameters like- power consumption and power delay product. The simulations of the proposed Full Adder have been performed using Tanner EDA Tool version 13.0. All the proposed design simulations are carried out at 45nm technology for various inputs like supply voltage, temperature and frequency. The decrease of 24% in power consumption has observed in proposed circuit. The results show a validity of double gate MOSFETs for designing for low power full adder circuit.","PeriodicalId":351783,"journal":{"name":"2015 Fifth International Conference on Advanced Computing & Communication Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design of Full Adder Circuit Using Double Gate MOSFET\",\"authors\":\"J. K. Sahani, Shiwani Singh\",\"doi\":\"10.1109/ACCT.2015.37\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design of a one bit full adder cell based on degenerate pass transistor logic (PTL) using Double Gate MOSFET. The design cell is degenerate 5-T XOR-XNOR module. This design has been compared with existing one-bit full adder cell based on degenerate pass transistor logic (PTL) designed using Single Gate MOSFET. In this paper, the proposed circuit has been analyzed for parameters like- power consumption and power delay product. The simulations of the proposed Full Adder have been performed using Tanner EDA Tool version 13.0. All the proposed design simulations are carried out at 45nm technology for various inputs like supply voltage, temperature and frequency. The decrease of 24% in power consumption has observed in proposed circuit. The results show a validity of double gate MOSFETs for designing for low power full adder circuit.\",\"PeriodicalId\":351783,\"journal\":{\"name\":\"2015 Fifth International Conference on Advanced Computing & Communication Technologies\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Fifth International Conference on Advanced Computing & Communication Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACCT.2015.37\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Fifth International Conference on Advanced Computing & Communication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACCT.2015.37","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

本文提出了一种基于简并通晶体管逻辑(PTL)的双栅MOSFET位全加法器单元的设计。设计单元为简并5-T XOR-XNOR模块。本设计与现有的利用单门MOSFET设计的基于简并通晶体管逻辑(PTL)的1位全加法器单元进行了比较。本文对所提出的电路进行了功耗和延时积等参数的分析。利用Tanner EDA工具13.0版对所提出的全加法器进行了仿真。所有提出的设计模拟都是在45纳米技术下进行的,包括各种输入,如电源电压、温度和频率。该电路的功耗降低了24%。结果表明,双栅mosfet在低功率全加法器电路设计中是有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of Full Adder Circuit Using Double Gate MOSFET
This paper presents a design of a one bit full adder cell based on degenerate pass transistor logic (PTL) using Double Gate MOSFET. The design cell is degenerate 5-T XOR-XNOR module. This design has been compared with existing one-bit full adder cell based on degenerate pass transistor logic (PTL) designed using Single Gate MOSFET. In this paper, the proposed circuit has been analyzed for parameters like- power consumption and power delay product. The simulations of the proposed Full Adder have been performed using Tanner EDA Tool version 13.0. All the proposed design simulations are carried out at 45nm technology for various inputs like supply voltage, temperature and frequency. The decrease of 24% in power consumption has observed in proposed circuit. The results show a validity of double gate MOSFETs for designing for low power full adder circuit.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信