{"title":"汽车集成电路稳健性片上保护","authors":"J. Salcedo, D. Clarke, J. Hajjar","doi":"10.1109/ICCDCS.2012.6188920","DOIUrl":null,"url":null,"abstract":"On-chip protection architecture for automotive ICs (integrated circuits) system-level robustness is introduced. It comprises three-level protection for interface pins with high bidirectional voltage swing. A first protection stage is optimized to sustain the largest portion of the ESD (electrostatic discharge) and EMI (electromagnetic interference)-induced stress. A second-level protection stage is customized to sustain the relatively lower IC-level ESD stress, and the third level protection stage absorbs the initial transient voltage impulse.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"PP 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"On-chip protection for automotive integrated circuits robustness\",\"authors\":\"J. Salcedo, D. Clarke, J. Hajjar\",\"doi\":\"10.1109/ICCDCS.2012.6188920\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On-chip protection architecture for automotive ICs (integrated circuits) system-level robustness is introduced. It comprises three-level protection for interface pins with high bidirectional voltage swing. A first protection stage is optimized to sustain the largest portion of the ESD (electrostatic discharge) and EMI (electromagnetic interference)-induced stress. A second-level protection stage is customized to sustain the relatively lower IC-level ESD stress, and the third level protection stage absorbs the initial transient voltage impulse.\",\"PeriodicalId\":125743,\"journal\":{\"name\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"PP 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2012.6188920\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On-chip protection for automotive integrated circuits robustness
On-chip protection architecture for automotive ICs (integrated circuits) system-level robustness is introduced. It comprises three-level protection for interface pins with high bidirectional voltage swing. A first protection stage is optimized to sustain the largest portion of the ESD (electrostatic discharge) and EMI (electromagnetic interference)-induced stress. A second-level protection stage is customized to sustain the relatively lower IC-level ESD stress, and the third level protection stage absorbs the initial transient voltage impulse.