65纳米CMOS工艺中LC-VCO和LC-DCO参数的比较

2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE) Pub Date : 2017-11-01 DOI:10.1109/AIEEE.2017.8270549

V. Macaitis, R. Navickas

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引用次数: 2

摘要

本文分析了在LC-VCO和LC-DCO两种振荡器中频率振荡器的性能。CMOS集成电路(IC)节点的技术相同为−65nm。这两个振荡器都基于交叉耦合NMOS拓扑，并采用Cadence IC软件包设计。通过在标称条件下(电源电压1.8 V，温度60℃，标称工艺角)对方案进行仿真得到所有参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of LC-VCO and LC-DCO parameters in 65 nm CMOS technology

In this paper the performance of frequency oscillators is analyzed in different types of oscillators LC-VCO and LC-DCO. CMOS integrated circuit (IC) technology nodes is the same − 65 nm. Both oscillators are based on cross-coupled NMOS topology and are designed with Cadence IC software package. All parameters are obtained by simulating the scheme under nominal conditions (supply voltage 1.8 V, temperature 60 °C, nominal technological process corner).

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来源期刊

2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)

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