采用h桥钳位电路的多级逆变器,单相三线栅格连接,适用于超结/SiC MOSFET

Y. Noge, J. Itoh
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引用次数: 6

摘要

提出了一种采用h桥钳位电路的多电平逆变器,用于单相三线制(1P3W)公用事业连接应用,如光伏系统。该逆变器由两个n电平逆变器和一个h桥箝位电路组成。由于在电网频率开关中使用高压h桥钳位电路,因此该逆变器具有与下一代半导体的高兼容性。所提出的逆变器只需要12个可控开关即可获得5级输出电压。在直流母线中性点接地的传统多电平变换器中,需要16个开关。本文对控制策略进行了讨论。在此基础上,提出了一种数值参数设计方法,并进行了仿真验证。最后,与使用超结MOSFET或SiC MOSFET的传统有源中性点箝位(ANPC)逆变器相比,钳位电路的导通损耗更低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-level inverter with H-bridge clamp circuit for single-phase three-wire grid connection suitable for Super-junction/SiC MOSFET
A multilevel inverter with H-bridge clamp circuit is proposed for single-phase three-wire (1P3W) utility connected applications such as PV system. The proposed inverter consists of two n-level inverters and a H-bridge clamp circuit. The proposed inverter features high compatibility with next generation semiconductors because the uses of a high voltage H-bridge clamp circuit at grid frequency switching. The proposed inverter requires only 12 controllable switches to obtain a 5-level output voltage. In conventional multi-level converters with grounded neutral point of the DC-bus, 16 switches are required. The control strategy is discussed in this paper. Moreover, a numerical parameter design method is considered and then verified by simulation. Finally, conduction loss of the clamp circuit is shown lower than that comparing with the conventional active neutral point clamped (ANPC) inverter using Super-junction MOSFET or SiC MOSFET.
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