1.9 GHz频段采用MBB技术的超小型低功耗前端HIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628254

T. Nakatsuka, J. Itoh, T. Yoshida, M. Nishitsuji, T. Uda, O. Ishikawa

{"title":"1.9 GHz频段采用MBB技术的超小型低功耗前端HIC","authors":"T. Nakatsuka, J. Itoh, T. Yoshida, M. Nishitsuji, T. Uda, O. Ishikawa","doi":"10.1109/GAAS.1997.628254","DOIUrl":null,"url":null,"abstract":"Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Super-small and low-power front-end HIC using MBB technology for 1.9 GHz bands\",\"authors\":\"T. Nakatsuka, J. Itoh, T. Yoshida, M. Nishitsuji, T. Uda, O. Ishikawa\",\"doi\":\"10.1109/GAAS.1997.628254\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628254\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用微碰撞键合(MBB)技术的超小型低功耗接收机前端混合集成电路(HIC)是一种用于1.9 GHz频段的新型集成电路。通过使用MBB, HIC微型化至3.5/spl次/4.0/spl次/1.0 mm，与常规HIC相比减少了60%以上。在1.9 GHz、3.0 V、4.5 mA的电源条件下，HIC的转换增益为16.0 dB, IP3输出为0 dBm，抑制比超过20 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Super-small and low-power front-end HIC using MBB technology for 1.9 GHz bands

Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

自引率

0.00%

发文量