ce掺杂Gd3(Ga,Al)5O12陶瓷的闪烁特性

2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC) Pub Date : 2013-10-01 DOI:10.1109/NSSMIC.2013.6829666

T. Yanagida, Y. Fujimoto, H. Yagi, T. Yanagitani

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引用次数: 0

摘要

对河岛化学制备的陶瓷Ce 0.1%掺杂Gd3(Ga,Al)5O12闪烁体进行了评价。在x射线诱导辐射发光中，在530 nm左右出现了强烈的发射峰。当137Cs 662 keV γ射线照射时，Si-APD的闪烁产光量为70000 ph/MeV。闪烁衰减时间为ce掺杂石榴石材料的典型值，约为100ns。

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Scintillation properties of ceramic Ce-doped Gd3(Ga,Al)5O12

Ceramic Ce 0.1% doped Gd₃(Ga,Al)₅O₁₂ scintillator fabricated by Konoshima Chemical was evaluated. In X-ray induced radioluminescence, intense emission peak appeared around 530 nm. When ¹³⁷Cs 662 keV γ-ray was irradiated, scintillation light yield turned out to be 70000 ph/MeV by using Si-APD. Scintillation decay timewas a typical value of Ce-doped garnet materials, ~ 100 ns.

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2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC)

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