{"title":"用有限元方法开发通用微电子器件模拟器","authors":"Changling Sung, F. Ho","doi":"10.1109/SECON.1995.513064","DOIUrl":null,"url":null,"abstract":"Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices.","PeriodicalId":334874,"journal":{"name":"Proceedings IEEE Southeastcon '95. Visualize the Future","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A finite-element approach to the development of a general purpose microelectronic device simulator\",\"authors\":\"Changling Sung, F. Ho\",\"doi\":\"10.1109/SECON.1995.513064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices.\",\"PeriodicalId\":334874,\"journal\":{\"name\":\"Proceedings IEEE Southeastcon '95. Visualize the Future\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Southeastcon '95. Visualize the Future\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1995.513064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '95. Visualize the Future","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1995.513064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A finite-element approach to the development of a general purpose microelectronic device simulator
Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices.