{"title":"谐振变换器用发射极开关晶闸管的性能评价","authors":"M. Trivedi, C. Winterhalter, H.H. Li, K. Shenai","doi":"10.1109/PEDS.1995.404954","DOIUrl":null,"url":null,"abstract":"This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<<ETX>>","PeriodicalId":244042,"journal":{"name":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance evaluation of an emitter switched thyristor for resonant converter applications\",\"authors\":\"M. Trivedi, C. Winterhalter, H.H. Li, K. Shenai\",\"doi\":\"10.1109/PEDS.1995.404954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<<ETX>>\",\"PeriodicalId\":244042,\"journal\":{\"name\":\"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDS.1995.404954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.1995.404954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance evaluation of an emitter switched thyristor for resonant converter applications
This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<>