Evaluation of switching performance of Si, SiC and GaN power transistors within ZVS mode

Presented paper describes the methodology of the investigation of soft-switching commutation mode of power semiconductor transistors. Various technological alternatives are being evaluated, while focus is given on the group of power switches suited for the SMPS front-end applications. Therefore Silicon (Si), Silicon Carbide (SiC) and Galium Nitrid (GaN) transistors have been measured under various operational conditions in order to find out and compare their switching performance. The measuring device was designed for the purposes of adaptive evaluation with the possibility of parametric change of key variables influencing commutation mode (supply voltage, switching frequency, etc.). The performance of individual structures was identified in the way of the power loss calculation of switching sequence. Received results identify the effectivity of the use of investigated transistor structures.