深低温下NPT和PT igbt的物理建模

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting. Pub Date : 2004-11-01 DOI:10.1109/IAS.2004.1348831

A. Caiafa, A. Snezhko, J. Hudgins, E. Santi, R. Prozorov, P. Palmer

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引用次数: 5

摘要

给出了穿孔和非穿孔绝缘栅双极晶体管(igbt)的详细实验数据。测试程序涵盖了来自不同制造商的额定电压为100- 600a和600- 1200v的IGBT器件。在4.2至295 K的温度范围内测试了igbt的关断行为。分析了低结温下的物理行为。因此，igbt使用Palmer-Leturcq模型建模，这是一种基于双极扩散方程的傅里叶展开的物理模型。

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Physics-based modeling of NPT and PT IGBTs at deep cryogenic temperatures

Detailed experimental data taken for punch-through (PT) and nonpunch-through (NPT) insulated gate bipolar transistors (IGBTs) are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The turn off behavior of the IGBTs is examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. The IGBTs are consequently modeled using the Palmer-Leturcq model, a physics-based model based on the Fourier expansion of the ambipolar diffusion equation.

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Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.

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