InGaN蓝光激光二极管增益曲线的优化

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7547090

Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu

{"title":"InGaN蓝光激光二极管增益曲线的优化","authors":"Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu","doi":"10.1109/NUSOD.2016.7547090","DOIUrl":null,"url":null,"abstract":"A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimization of the gain curve of the InGaN blue light laser diode\",\"authors\":\"Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu\",\"doi\":\"10.1109/NUSOD.2016.7547090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7547090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

用泊松方程、漂移扩散方程、薛定谔方程和赫姆霍兹方程求解器对激光二极管(LD)结构进行了数值模拟。通过对不同量子阱数、不同量子阱中铟成分和不同导层尺寸的优化比较，优化了增益曲线。

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Optimization of the gain curve of the InGaN blue light laser diode

A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.

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来源期刊

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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