用x射线衍射评价GaInAs/GaInAsP应变层多量子阱的结构参数

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328171

J. L. de Miguel, E. Gomez-Salas, J.L. Martin

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引用次数: 0

摘要

本文将x射线衍射运动理论给出的表达式具体应用于GaInAs/GaInAsP的应变层多量子阱(SL-MQW)。基于这些表达式提出了一个程序，在适当设计测试样品的情况下，得到了SL-MQW的层厚度和组成。将此方法应用于含有20周期GaInAs/GaInAsP的SL-MQW样品，其发射频率为1.55 /spl mu/m，并使用x射线衍射动力学理论对结果进行了双重验证。本程序用于在常规基础上快速准确地评估SL-MQW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Assessment of the structural parameters of GaInAs/GaInAsP strained layer multiquantum wells by X-ray diffraction

The expressions given by the kinematic theory of X-ray diffraction have been particularized to strained layers multiple quantum wells (SL-MQW) of GaInAs/GaInAsP. A procedure based on these expressions is proposed that, with a proper design of the test sample, yields the layer thicknesses and composition of the SL-MQW. This procedure is applied to a sample containing a 20 periods SL-MQW of GaInAs/GaInAsP emitting at 1.55 /spl mu/m, and the results double checked using the dynamical theory of X-ray diffraction. This procedure is used for the fast and accurate assessment of SL-MQW on a routine basis.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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