{"title":"Mo尖端单碳纳米管微栅场发射阵列","authors":"Wensheng Shao, M. Ding, Changqing Chen, Xinghui Li, Guodong Bai, Jinjun Feng","doi":"10.1109/IVELEC.2007.4283285","DOIUrl":null,"url":null,"abstract":"Using our approach previously reported, we have fabricated relatively large area micro-gated-field emission arrays with carbon nanotube (CNT) grown on Mo tips. By redesigning the device and fabrication processes, the percentage of single CNTs increased to about 50-70% with a substantial improvement in leakage current between gate and cathode and gate interceptive current. The I-V measurement of a 11000 cell array at a gate-to cathode voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm2, with a gate current only 3.3% of the anode current.","PeriodicalId":254940,"journal":{"name":"2007 IEEE International Vacuum Electronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Micro-Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips\",\"authors\":\"Wensheng Shao, M. Ding, Changqing Chen, Xinghui Li, Guodong Bai, Jinjun Feng\",\"doi\":\"10.1109/IVELEC.2007.4283285\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using our approach previously reported, we have fabricated relatively large area micro-gated-field emission arrays with carbon nanotube (CNT) grown on Mo tips. By redesigning the device and fabrication processes, the percentage of single CNTs increased to about 50-70% with a substantial improvement in leakage current between gate and cathode and gate interceptive current. The I-V measurement of a 11000 cell array at a gate-to cathode voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm2, with a gate current only 3.3% of the anode current.\",\"PeriodicalId\":254940,\"journal\":{\"name\":\"2007 IEEE International Vacuum Electronics Conference\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Vacuum Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVELEC.2007.4283285\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Vacuum Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVELEC.2007.4283285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
利用我们先前报道的方法，我们在Mo尖端上生长了碳纳米管(CNT)，制备了相对大面积的微门控场发射阵列。通过重新设计器件和制造工艺，单CNTs的百分比增加到约50-70%，栅极和阴极之间的泄漏电流和栅极拦截电流有了显著改善。在栅极电压为92 V时，对11000个电池阵列的I-V测量显示，阳极电流为1.2 mA，对应的电流密度为0.57 a /cm2，而栅极电流仅为阳极电流的3.3%。
Micro-Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips
Using our approach previously reported, we have fabricated relatively large area micro-gated-field emission arrays with carbon nanotube (CNT) grown on Mo tips. By redesigning the device and fabrication processes, the percentage of single CNTs increased to about 50-70% with a substantial improvement in leakage current between gate and cathode and gate interceptive current. The I-V measurement of a 11000 cell array at a gate-to cathode voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm2, with a gate current only 3.3% of the anode current.
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