低温退火对热流传感用镍rtd的影响

Youssef Mokadem, S. Bégot, F. Lanzetta, J. Rauch, Aymen Zribi, V. Moutarlier, M. Barthès
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引用次数: 0

摘要

本文研究了退火对镍薄膜电阻式温度探测器性能的影响。目标应用是热通量传感。基板由带有铬粘合层的硼浮法玻璃制成。在150°C和300°C之间的几种退火温度适用于该组件。通过SEM图像对薄膜的沉积和退火过程进行了分析。讨论了传感器电阻和温度系数的变化规律。退火温度的选择确保了测量的可重复性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of low temperature annealing on Nickel RTDs designed for heat flux sensing
In this paper, we study the influence of annealing on the performance of Resistive Temperature Detectors made from Nickel thin films. The aimed application is heat flux sensing. The substrate is made of Borofloat glass with a Chromium adhesive layer. Several annealing temperatures between 150°C and 300°C are applied to this assembly. The thin films as deposited and after annealing are analyzed through SEM images. The evolution of the resistance and the temperature coefficient of the sensor are discussed. An annealing temperature is selected that ensures the repeatability of measurements.
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