当代CMOS环形振荡器的比较

Dean A. Badillol, S. Kiaei, E. Elliot
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引用次数: 32

摘要

这项工作提供了测量数据和分析,准确地比较了三级和四级环形振荡器。这里考虑的延迟单元拓扑包括线性源耦合和两种饱和类型。每个振荡器在1.8 V, 0.18 /spl mu/m的CMOS工艺中同时制造,并具有相位噪声,功耗和调谐范围的特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of contemporary CMOS ring oscillators
This work presents measured data and analysis, accurately comparing three, four-stage ring oscillators. The delay cell topologies considered here include the linear source coupled, and two saturating types. Each oscillator is fabricated concurrently in a 1.8 V, 0.18 /spl mu/m CMOS process and is characterized for phase noise, power consumption and tuning range.
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