基于电感和变压器的集成射频振荡器:比较研究

H. Krishnaswamy, H. Hashemi
{"title":"基于电感和变压器的集成射频振荡器:比较研究","authors":"H. Krishnaswamy, H. Hashemi","doi":"10.1109/CICC.2006.320954","DOIUrl":null,"url":null,"abstract":"Prior publications claim that transformer-based resonators achieve improvements in quality factor (Q), which translates to better phase noise in oscillators. This paper combines rigorous analysis with on-chip practical considerations for various types of on-chip transformers to demonstrate the importance of the resonator topology for Q-enhancement. We show that for a fixed silicon chip area, transformer-based resonators do not exhibit superior performance compared to inductor-based designs. Prototype oscillators are implemented at 5GHz in a 0.18mum CMOS process to validate these claims","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Inductor- and Transformer-based Integrated RF Oscillators: A Comparative Study\",\"authors\":\"H. Krishnaswamy, H. Hashemi\",\"doi\":\"10.1109/CICC.2006.320954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Prior publications claim that transformer-based resonators achieve improvements in quality factor (Q), which translates to better phase noise in oscillators. This paper combines rigorous analysis with on-chip practical considerations for various types of on-chip transformers to demonstrate the importance of the resonator topology for Q-enhancement. We show that for a fixed silicon chip area, transformer-based resonators do not exhibit superior performance compared to inductor-based designs. Prototype oscillators are implemented at 5GHz in a 0.18mum CMOS process to validate these claims\",\"PeriodicalId\":269854,\"journal\":{\"name\":\"IEEE Custom Integrated Circuits Conference 2006\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Custom Integrated Circuits Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2006.320954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

先前的出版物声称,基于变压器的谐振器实现了质量因子(Q)的改进,这转化为振荡器中更好的相位噪声。本文结合对各种类型片上变压器的严格分析和片上实际考虑,证明了谐振器拓扑对q增强的重要性。我们表明,对于固定的硅片区域,与基于电感的设计相比,基于变压器的谐振器没有表现出优越的性能。在0.18 μ m CMOS工艺中实现了5GHz的原型振荡器,以验证这些说法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inductor- and Transformer-based Integrated RF Oscillators: A Comparative Study
Prior publications claim that transformer-based resonators achieve improvements in quality factor (Q), which translates to better phase noise in oscillators. This paper combines rigorous analysis with on-chip practical considerations for various types of on-chip transformers to demonstrate the importance of the resonator topology for Q-enhancement. We show that for a fixed silicon chip area, transformer-based resonators do not exhibit superior performance compared to inductor-based designs. Prototype oscillators are implemented at 5GHz in a 0.18mum CMOS process to validate these claims
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