原始可调谐射频MEMS无源元件集成到单个芯片

P. Nicole, J. Pagazani, L. Rousseau, F. Marty, N. Pavy, G. Lissorgues
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引用次数: 1

摘要

本文报道了一种原始的旋转MEMS结构,用于设计工作在X波段的射频可调谐无源元件。这些元件是模拟调谐MEMS可变电容器或电感,分别基于表面变化或磁耦合变化。旋转MEMS的选择允许高位移导致高调谐比。所提出的解决方案的一大优势在于可以在缩小到20mm2以下的表面上将多个模拟调谐RF MEMS(最多8个)集成到同一芯片中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Original tunable RF MEMS passive components integrated into a single chip
This paper reports on an original rotating MEMS structure used to design RF tunable passive components operating in the X band. These components are either analog tuning MEMS variable capacitors or inductors, based respectively on surface variation or magnetic coupling variation. The choice of a rotating MEMS allows high displacements leading to high tuning ratios. A great advantage of the proposed solution relies in the possibility to integrate into the same chip several analog tuning RF MEMS (up to 8) on a surface reduced below 20mm2.
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