一种用于5G通信的紧凑型39 ghz 17.2 dbm功率放大器

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524130

Yun Wang, Rui Wu, K. Okada

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引用次数: 6

摘要

本文设计了一种用于毫米波第五代(5G)移动通信的39ghz功率放大器。功率放大器由两个差分电容中和的共源级组成。各级配电网采用低损耗变压器。在1.1 v电源下，该功率放大器在39 GHz时实现了17 dB的小信号增益，17.2 dBm的饱和输出功率(PSAT)和15.5 dBm的1dB压缩点(P1dB)。放大器的最大功率附加效率(PAEMAX)为31.2%，在P1dB时为30.2%。该放大器的平均输出功率为9.0 dBm, PAE为10.0%，EVM为−25 dBc。该放大器采用标准65纳米CMOS制造，占地面积为0.081 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Compact 39-GHz 17.2-dBm Power Amplifier for 5G Communication in 65-nm CMOS

This paper presents design of a 39-GHz power amplifier for fifth-generation (5G) mobile communication in millimeter-wave. The power amplifier consists of two differential capacitive-neutralized common-source stages. Low-loss transformers are employed for matching network in each stage. With 1.1-V supply, the power amplifier achieves a small-signal gain of 17 dB, saturated output power (PSAT) of 17.2 dBm, and 1-dB compression point (P1dB) of 15.5 dBm at 39 GHz. The amplifier has a maximum power-added efficiency (PAEMAX) of 31.2% and 30.2% at P1dB. The amplifier has an average output power of 9.0 dBm and 10.0% PAE with −25 dBc EVM. The amplifier has been fabricated in standard 65-nm CMOS and occupies an area of 0.081 mm2.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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