{"title":"InP的化学蚀刻","authors":"C. Sundararaman, A. Mouton, J. Currie","doi":"10.1109/ICIPRM.1990.203022","DOIUrl":null,"url":null,"abstract":"The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Chemical etching of InP\",\"authors\":\"C. Sundararaman, A. Mouton, J. Currie\",\"doi\":\"10.1109/ICIPRM.1990.203022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing. The chemical state of the surface has been studied by X-ray photoelectron spectroscopy (XPS). These solutions oxidize the surface resulting in the formation of InPO/sub 4/:xH/sub 2/O, which could be useful for Schottky and MIS device applications. The use of a 20 wt.% solution for mesa type etching applications and a 5-10 wt.% solution for cleaning purposes is suggested.<>
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