用于检测多层互连系统中由快速温度循环和电迁移引起的薄膜开裂的测试芯片

H. Nguyen, C. Salm, J. Vroemen, J. Voets, B. Krabbenborg, J. Bisschop, A. Mouthaan, F. Kuper
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引用次数: 7

摘要

功率ic中的温度循环是一个可靠性危害,当电迁移也起作用时更是如此。温度循环的频率在音频域中,这使得在环境室中无法进行测试。本文报道了一种新型测试芯片的设计和应用,用于研究多层互连系统中的快速温度循环、电迁移及其相互作用。集成到测试芯片是一个加热元件,一个温度传感器,和挤压监视器。通过仿真研究了加工后的初始应力分布和温度瞬变过程中测试芯片内部的局部温度分布。在快速温度循环实验(仅使用内部加热)和电迁移实验方面获得了初步的实验结果。讨论了失效分布和失效模式。结果表明,片上循环是研究实际情况下功率集成电路可靠性的有力工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems
Temperature cycling in power ICs is a reliability hazard, even more so when electromigration is playing a role as well. The frequency of the temperature cycling is in the audio domain, which makes it impossible to test in environmental chambers. In the paper, the design and application of a novel test chip to study fast temperature cycling, electromigration and their interaction in multilevel interconnection systems is reported. Incorporated into the test chip are a heating element, a temperature sensor, and extrusion monitors. Simulation was used to study the initial stress distributions after processing and local temperature distributions in the test chip during the temperature transient. First experimental results have been obtained in the area of fast temperature cycling experiments (by using internal heating only) and electromigration experiments. Failure distributions and failure modes are discussed. Results indicate that on-chip cycling is a powerful tool to study reliability of power ICs under realistic conditions.
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