{"title":"扩展InGaAs/InGaAs量子结构用于1.9 /spl mu/m以上的近红外光探测","authors":"J. Fu, X. Yu, Y. Kuo, J. Harris","doi":"10.1109/QELS.2005.1549100","DOIUrl":null,"url":null,"abstract":"Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.","PeriodicalId":420162,"journal":{"name":"2005 Quantum Electronics and Laser Science Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 /spl mu/m\",\"authors\":\"J. Fu, X. Yu, Y. Kuo, J. Harris\",\"doi\":\"10.1109/QELS.2005.1549100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.\",\"PeriodicalId\":420162,\"journal\":{\"name\":\"2005 Quantum Electronics and Laser Science Conference\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 Quantum Electronics and Laser Science Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/QELS.2005.1549100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 Quantum Electronics and Laser Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/QELS.2005.1549100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 /spl mu/m
Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.
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