噪声系数2.4-3.4 dB的28-60 GHz SiGe HBT LNA

2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI:10.23919/EuMIC.2019.8909633

J. Qayyum, J. Albrecht, J. Papapolymerou, A. Ulusoy

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引用次数: 0

摘要

本文提出了一种适用于Ka、Q和v波段应用的28- 60ghz多频段低噪声放大器(LNA)，该放大器采用0.13 μ m / SiGe BiCMOS技术实现。本文提出的LNA通过采用t型匹配拓扑作为级间匹配网络(IMN)来实现其多频段性能。LNA的实测增益为14.5 dB和14.1 dB, 28 GHz和60 GHz时的仿真噪声系数(NF)分别为2.4 dB和3.4 dB，平均NF为2.9 dB。在22ghz ~ 67ghz范围内，输入回波损耗小于- 10db。该芯片占地面积为0.15 mm2t，在2.5 V电源下消耗27mw。据作者所知，实现的LNA优于类似硅技术中任何最先进的LNA。

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A 28-60 GHz SiGe HBT LNA with 2.4-3.4 dB Noise Figure

This paper presents a 28-60 GHz multi-band low-noise amplifier (LNA) suitable for Ka-, Q- and V-band applications, which is realized in $0.13-\mu m$ SiGe BiCMOS technology. The proposed LNA achieves its multi-band performance by employing a T-type matching topology as inter-stage matching network (IMN). The LNA has a measured gain of 14.5 dB and 14.1 dB, and simulated noise Figure (NF) of 2.4 dB and 3.4 dB at 28 and 60 GHz with a mean NF of 2.9 dB. The input return loss is less than -10 dB from 22-67 GHz. The chip occupies an area of 0.15 mm2t and consumes 27 mW from a 2.5 V power supply. To the authors’ knowledge the realized LNA is superior than any state-of-the-art LNAs in similar silicon technologies.

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2019 14th European Microwave Integrated Circuits Conference (EuMIC)

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