{"title":"量子阱结构跃迁能温度依赖性的射击法计算","authors":"Bunjong Jukgoljun, W. Pecharapa, W. Techitdheera","doi":"10.1117/12.799424","DOIUrl":null,"url":null,"abstract":"The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.","PeriodicalId":426962,"journal":{"name":"International Workshop and Conference on Photonics and Nanotechnology","volume":"230 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shooting method calculation of temperature dependence of transition energy for quantum well structure\",\"authors\":\"Bunjong Jukgoljun, W. Pecharapa, W. Techitdheera\",\"doi\":\"10.1117/12.799424\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.\",\"PeriodicalId\":426962,\"journal\":{\"name\":\"International Workshop and Conference on Photonics and Nanotechnology\",\"volume\":\"230 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshop and Conference on Photonics and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.799424\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop and Conference on Photonics and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.799424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Shooting method calculation of temperature dependence of transition energy for quantum well structure
The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.
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