含pzt混合氧化物薄膜在镀铜卡普顿衬底上的多靶溅射

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912320

A. Kleiner, G. Suchaneck, A. Dejneka, L. Jastrabík, V. Lavrentiev, D. Kiselev, G. Gerlach

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引用次数: 0

摘要

采用多目标反应磁控溅射的方法，将直径200 mm的金属靶(Pb, Ti, Zr)大面积沉积到cu涂层的Kapton HN衬底上。高功率脉冲溅射已被用于锆靶(或替代为钛靶)。用XPS和RBS评价了膜的组成。用PFM研究了材料的压电性能。

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Multitarget sputtering of PZT-containing mixed oxide thin films onto copper-coated Kapton substrates

Large area film deposition was performed by means of multitarget reactive magnetron sputtering from 200 mm diameter metallic targets (Pb, Ti, Zr) onto Cu-coated Kapton HN substrates. High-power pulse sputtering has been employed for the Zr-target (or alternatively for the Ti-target). Film composition profiles were evaluated by XPS and RBS. Piezoelectric properties were investigated by PFM.

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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