高电流加速下InGaP/GaAs HBT的可靠性

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964393

K. Feng, L. Runshing, P. Canfield, Wanxiu Sun

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引用次数: 7

摘要

研究了InGaP/GaAs异质结双极晶体管在高发射极电流密度应力下的可靠性。电流加速度对晶体管寿命的影响是幂律关系。在25kA/cm/sup 2/至150ka /cm/sup 2/的范围内，我们提取了寿命与电流密度的平方根依赖关系。这些结果与在AlGaAs HBT上测量的近似平方律结果进行了比较。

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Reliability of InGaP/GaAs HBT's under high current acceleration

The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT's.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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