{"title":"多色电致发光二极管用硅qd掺杂富硅SiOx薄膜的等离子体功率失谐合成","authors":"Chih-Hsien Cheng, Yu-Chung Lien, Gong-Ru Lin","doi":"10.1364/ACPC.2012.ATH2F.5","DOIUrl":null,"url":null,"abstract":"The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 μW/cm2 with highest external quantum efficiency of 2.4%.","PeriodicalId":118096,"journal":{"name":"2012 Asia Communications and Photonics Conference (ACP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasma power detuned synthesis of Si-QD doped Si-rich SiOx thin film for multicolor electroluminescent diodes\",\"authors\":\"Chih-Hsien Cheng, Yu-Chung Lien, Gong-Ru Lin\",\"doi\":\"10.1364/ACPC.2012.ATH2F.5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 μW/cm2 with highest external quantum efficiency of 2.4%.\",\"PeriodicalId\":118096,\"journal\":{\"name\":\"2012 Asia Communications and Photonics Conference (ACP)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Asia Communications and Photonics Conference (ACP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/ACPC.2012.ATH2F.5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/ACPC.2012.ATH2F.5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma power detuned synthesis of Si-QD doped Si-rich SiOx thin film for multicolor electroluminescent diodes
The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 μW/cm2 with highest external quantum efficiency of 2.4%.
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