1/4英寸2M像素CMOS图像传感器，1.75晶体管/像素

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332618

M. Mori, M. Katsuno, S. Kasuga, T. Murata, T. Yamaguchi

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引用次数: 48

摘要

提出了一种采用4个光电二极管组成的像素结构的2.5V CMOS图像传感器。该图像在0.25/spl mu/m的IP2M CMOS工艺中实现了2.25/spl mu/m的像素间距和25%的孔径比。

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A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel

A 2.5V CMOS image sensor using a pixel configuration of four photodiodes in one unit sharing seven transistors is presented. This image achieves a 2.25/spl mu/m pixel pitch with 25% aperture ratio in a 0.25/spl mu/m IP2M CMOS process.

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2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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