用于BiCMOS SiGe hbt和CMOS超薄栅氧化物的RF-ESD保护的二极管触发可控硅(DTSCR)

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269334

M. Mergens, C. Russ, K. Verhaege, J. Armer, P. Jozwiak, R. Mohn, B. Keppens, C. S. Trinh

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引用次数: 93

摘要

介绍了一种新型的二极管触发SCR (DTSCR) ESD保护元件，用于低压应用(信号，电源电压/spl /1.8 V)和极窄的ESD设计余量。触发电压工程与快速高效的可控硅电压箝位相结合，用于保护超敏感电路节点，例如SiGe HBT基(例如，在BiCMOS-0.35 /spl mu/m LNA输入中f/sub Tmax/=45 GHz)和薄栅极氧化物(例如，在CMOS-0.09 /spl mu/m输入中tox=1.7 nm)。基于CMOS器件的可控硅集成是可能的，或者可以选择由高速SiGe hbt形成。

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Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides

A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl les/1.8 V) and extremely narrow ESD design margins. Trigger voltage engineering in conjunction with fast and efficient SCR voltage clamping is applied for the protection of ultra-sensitive circuit nodes, such as SiGe HBT bases (e.g. f/sub Tmax/=45 GHz in BiCMOS-0.35 /spl mu/m LNA input) and thin gate-oxides (e.g. tox=1.7 nm in CMOS-0.09 /spl mu/m input). SCR integration is possible based on CMOS devices or can alternatively be formed by high-speed SiGe HBTs.

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来源期刊

IEEE International Electron Devices Meeting 2003

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