{"title":"栅极触发可控硅导通瞬态的数值分析","authors":"W. Anheier, W. Engl, R. Sittig","doi":"10.1109/IEDM.1977.189238","DOIUrl":null,"url":null,"abstract":"A one dimensional transient analysis for the distribution of carriers and potential within a power thyristor was carried out. The simulation is based on geometrical, technological and physical data obtained from an actual device structure. The 11-A thyristor CS 106 has an area of .02 cm2and a thickness of 265 microns. The simulation includes all known physical mechanisms which are important for power devices, e.g. SRH- and Auger recombination avalanche multiplication, and mobility saturation effects. The results of this numerical approach show different internal mechanisms, which are identified with the different time delays of the turn-on wave forms.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Numerical analysis of gate triggered SCR turn-on transients\",\"authors\":\"W. Anheier, W. Engl, R. Sittig\",\"doi\":\"10.1109/IEDM.1977.189238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A one dimensional transient analysis for the distribution of carriers and potential within a power thyristor was carried out. The simulation is based on geometrical, technological and physical data obtained from an actual device structure. The 11-A thyristor CS 106 has an area of .02 cm2and a thickness of 265 microns. The simulation includes all known physical mechanisms which are important for power devices, e.g. SRH- and Auger recombination avalanche multiplication, and mobility saturation effects. The results of this numerical approach show different internal mechanisms, which are identified with the different time delays of the turn-on wave forms.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189238\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical analysis of gate triggered SCR turn-on transients
A one dimensional transient analysis for the distribution of carriers and potential within a power thyristor was carried out. The simulation is based on geometrical, technological and physical data obtained from an actual device structure. The 11-A thyristor CS 106 has an area of .02 cm2and a thickness of 265 microns. The simulation includes all known physical mechanisms which are important for power devices, e.g. SRH- and Auger recombination avalanche multiplication, and mobility saturation effects. The results of this numerical approach show different internal mechanisms, which are identified with the different time delays of the turn-on wave forms.
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