J. Horng, Szu-Lin Liu, A. Kundu, Chin-Ho Chang, Chung-Hui Chen, H. Chiang, Y. Peng
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A 0.7V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies
This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over -10 ~ 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2 and draws 70uW total power from a 0.7V supply. Depending on resolution, the measurement time can change from 10μsec to 1.6msec. This approach is not restricted by forward junction bias (~0.7V) of conventional BJTs and diodes.
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