用于提高半导体激光器效率的非对称采样布拉格光栅结构

Photonics Asia Pub Date : 2014-12-03 DOI:10.1117/12.2073460

Yating Zhou, Gang Wang, Hong Zhu, Jun Lu, Xiangfei Chen

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引用次数: 0

摘要

非对称采样布拉格光栅(SBG)半导体激光器由长度相同但采样占空比不同的两个部分组成，可以在其中心引入任意等效相移(EPS)。同时，将两个部分的采样占空比调整为不同的幅度，使激光器的一个面输出的激光功率大于另一个面输出的激光功率。也就是说，该方法可用于设计和制造具有更高输出效率的EPS SBG半导体激光器。

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An asymmetric sampled Bragg grating structure for improving semiconductor laser efficiency

An asymmetric sampled Bragg grating (SBG) semiconductor laser, which consists of two sections with same length but different sampling duty cycle, can be introduced an arbitrary equivalent-phase-shift (EPS) into its center. At the same time, to adjust the sampling duty cycles in the two sections as different magnitude, the studied laser can output more lasing power from its one facet than that from the other one. That is to say, this method can be used to design and fabricate the EPS SBG semiconductor laser with higher output efficiency.

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Photonics Asia

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