一种低压宽摆FGMOS电流放大器

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353) Pub Date : 2002-08-07 DOI:10.1109/ISCAS.2002.1010542

K. Moolpho, J. Ngarmnil, K. Nandhasri

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引用次数: 5

摘要

本文利用CMOS逆变器和最近提出的采用浮栅mosfet的加性模拟逆变器，提出了一种完全采用AB类结构的新型电流放大电路。在负反馈拓扑中工作，放大器可以处理高达/spl plusmn/200 /spl mu/ a的宽信号摆幅，THD为1%，C/sub / 10pf。设计和HSPICE仿真结果在0.5 /spl μ l /m双聚CMOS工艺上进行了演示，分别采用1.5 V和1 V电源表示高频和低功耗能力。

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A low-voltage wide-swing FGMOS current amplifier

This paper proposes a new current amplifier circuit totally formed in the class AB structure utilizing CMOS inverters and the recently proposed additive analog inverter using floating-gate MOSFETs. Operating in a negative feedback topology, the amplifier can deal with wide signal swings up to /spl plusmn/200 /spl mu/A, with 1% of the THD and 10 pF of C/sub L/. Designs and HSPICE simulation results are demonstrated on 0.5 /spl mu/m double poly CMOS processes with 1.5 V and 1 V power supplies to indicate high frequency and low power capabilities respectively.

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来源期刊

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)

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