The Effect of Finite Channel Width and Negative Differential on the Electric Field Distributions in Gaas Mesfets

An analytical approximation to the electric field distribution in the channel portion of a GaAs MESFET is der i ved. The analytical model takes into account the negat ive differential mobility and the fact that the channel through which the current flows in a FET has a iinite width. To make the calculations more exact, the channel width is taken to be variable everywhere under the gate region. The present model is useful for FETs with short and moderate gate lengths. INTROWCTION