线性直流电流调节器的射频抗扰度研究

2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2015-11-01 DOI:10.1109/EMCCOMPO.2015.7358342

Philipp Schroeter, F. Klotz, M. Pamato

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引用次数: 0

摘要

本文研究并比较了直流稳压器对电磁干扰的抗扰度。分析了电磁干扰对典型拓扑结构性能的影响。结果表明，特别是稳压器输出对电磁干扰非常敏感，因为毫伏范围内的干扰水平会导致严重的故障。随后，本文介绍了一种设计抗电磁干扰稳压器的结构化方法。在IC级(DPI)和系统级(BCI)上的射频抗扰度测量证明，在电气特性和电路面积相同的情况下，电阻拓扑结构比经典稳压器具有更好的电磁兼容性能。该电路采用HV- BiCMOS技术设计，用于汽车应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RF immunity investigations of linear DC current regulators

This paper studies and compares the RF immunity of DC current regulators against electromagnetic interferences (EMIs). The effect of EMI on the performance of a classic topology is analyzed. It turns out, especially the regulators output is very sensitive against EMI since disturbance levels in the millivolt range cause serious malfunctions. Subsequently the paper introduces a structured approach to the design of EMI resistant regulators. RF immunity measurements on IC level (DPI) and on system level (BCI) proof the superior EMC performance of the resisting topologies over the classic regulator, while the electrical characteristics and the area of the circuits are the same. The circuits have been designed using a HV- BiCMOS technology for automotive applications.

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2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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