交叉共振门超导传输量子比特的耦合器特性

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371955

H. Paik, S. Srinivasan, S. Rosenblatt, J. Chavez-Garcia, D. Bogorin, O. Jinka, G. Keefe, Dongbing Shao, J. Yau, M. Brink, J. Chow

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引用次数: 3

摘要

我们描述了两个量子位交叉共振门和各种耦合量子位排列上的意外剩余耦合。基于交叉共振门速率和非最近邻耦合的衰减，研究了直接耦合和量子总线耦合。我们用哈密顿层析成像方法提取了耦合率，并与微波模拟进行了比较。

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Coupler characterization of superconducting transmons qubits for cross-resonance gate

We characterize two-qubit cross-resonance gates and unintended residual coupling on various coupled qubit arrangements. Direct coupling versus coupling via a quantum bus are studied on the basis of cross-resonance gate rate and fall-off of non-nearest neighbor coupling. We experimentally extract coupling rates using Hamiltonian tomography methods, and compare with microwave simulations.

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2020 IEEE International Electron Devices Meeting (IEDM)

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