Computer Interface for Electroluminescence (EL)

The goal of Computer aided device start from the physical description of integrated circuit devices, considering both the physical configuration and related device properties and build the link between the broad range of physics and electrical behavior models that support circuit design. Physics-based modeling of devices, is distributed and lumped form is an essential part of the IC process development. It seeks to quantify the underlying understanding of the technology and abstract that knowledge to the device design level, including extraction of the key parameters that support circuit design and statistical metrology [1][2]. IC development for more than a quarter-century has been dominated by the MOS technology. In the 1970s and 1980s NMOS was favored owing to speed and area advantages, coupled with technology limitations and concerns related to isolation, parasitic effects and process complexity. During that era of NMOS-dominated LSI and the emergence of VLSI, the fundamental scaling laws of MOS technology were codified and broadly applied [3]. It was also during this period that Computer Aided Device reached maturity in terms of realizing robust process modeling (primarily one-dimensional) which then became an integral technology design tool, used universally across the industry [4]. At the same time device simulation, dominantly two-dimensional owing to the nature of MOS devices, became the work-horse of technologists in the design and scaling of devices [5]. The transition from NMOS to CMOS technology resulted in the necessity of tightly coupled and fully 2D simulators for process and device simulations [6][7].