参数

Richard Swinbank
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引用次数: 81

摘要

提出了一种简单有效的提取小信号MOSFET等效电路模型参数的方法,包括衬底电阻和电容。与以前的方法不同,衬底参数、电阻和电感直接确定,无需任何曲线拟合优化。在40 GHz范围内,观测到的S参数与模型参数吻合良好,从而验证了模型及其提取方法的准确性。©2003
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Parameters
: A simple and efficient method to extract model parameters of a small-signal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curve-fitting optimization. Good agreement between the measured and modeled S parameters is observed up to 40 GHz, thus verifying the accuracy of the model and its extraction method. © 2003
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